NXP MRF7S21150HSR3

NXP · FETs & Power MOSFETs · MPN MRF7S21150HSR3

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Specifications

Drain to Source Voltage65V
Configuration-
Current - Continuous Drain(Id)-
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))2.7V
Operating Temperature-
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)0.9pF
Input Capacitance(Ciss)320pF
Gate Charge(Qg)-
Output Capacitance(Coss)590pF

Technical details

65V 2.7V RF FETs, MOSFETs RoHS

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