NXP MRF7S21110HR3

NXP · FETs & Power MOSFETs · MPN MRF7S21110HR3

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Specifications

Drain to Source Voltage65V
Current - Continuous Drain(Id)-
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))2.7V
Operating Temperature-
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)7.95pF
Input Capacitance(Ciss)232pF
Gate Charge(Qg)-
Output Capacitance(Coss)613pF

Technical details

65V 2.7V SOT-957A RF FETs, MOSFETs RoHS

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