NXP MRF7S19120NR1

NXP · FETs & Power MOSFETs · MPN MRF7S19120NR1

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Specifications

Drain to Source Voltage65V
Current - Continuous Drain(Id)-
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))2.7V
Operating Temperature-
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)1.65pF
Input Capacitance(Ciss)1.03pF
Gate Charge(Qg)-
Output Capacitance(Coss)600pF

Technical details

65V 2.7V TO-270AB RF FETs, MOSFETs RoHS

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