NXP MRF6S23100HSR3

NXP · FETs & Power MOSFETs · MPN MRF6S23100HSR3

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Specifications

Current - Continuous Drain(Id)-
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))3V
Operating Temperature-
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)1.5pF
Input Capacitance(Ciss)-
Gate Charge(Qg)-
Output Capacitance(Coss)-

Technical details

3V 20W RF FETs, MOSFETs RoHS

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