NXP · FETs & Power MOSFETs · MPN MRF6S21190HR3
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| Drain to Source Voltage | 68V |
|---|---|
| Current - Continuous Drain(Id) | - |
| Type | N-Channel |
| RDS(on) | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Operating Temperature | - |
| Pd - Power Dissipation | 175W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF |
| Input Capacitance(Ciss) | 526pF |
| Gate Charge(Qg) | - |
| Output Capacitance(Coss) | 185pF |
68V 3V 175W NI-880 RF FETs, MOSFETs RoHS