NXP MRF6S21100NBR1

NXP · FETs & Power MOSFETs · MPN MRF6S21100NBR1

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Specifications

Drain to Source Voltage68V
Current - Continuous Drain(Id)-
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))3V
Operating Temperature-
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)1.5pF
Input Capacitance(Ciss)-
Gate Charge(Qg)-
Output Capacitance(Coss)-

Technical details

68V 3V TO-272-WB-4 RF FETs, MOSFETs RoHS

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