NXP MRF6S19200HR5

NXP · FETs & Power MOSFETs · MPN MRF6S19200HR5

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Specifications

Drain to Source Voltage66V
Current - Continuous Drain(Id)-
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))3V
Operating Temperature-
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)2.3pF
Input Capacitance(Ciss)503pF
Gate Charge(Qg)-
Output Capacitance(Coss)185pF

Technical details

66V 3V 130W SOT-957A RF FETs, MOSFETs RoHS

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