NXP · FETs & Power MOSFETs · MPN MRF5S19060NBR1
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| Drain to Source Voltage | 65V |
|---|---|
| Configuration | Common source |
| Current - Continuous Drain(Id) | - |
| Type | N-Channel |
| RDS(on) | - |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Operating Temperature | - |
| Pd - Power Dissipation | 218.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | - |
| Output Capacitance(Coss) | - |
65V 3.5V 218.8W TO-272-WB-4 RF FETs, MOSFETs RoHS