NXP MRF21125R3

NXP · FETs & Power MOSFETs · MPN MRF21125R3

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Specifications

Drain to Source Voltage65V
Configuration-
Current - Continuous Drain(Id)-
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))4V
Operating Temperature-
Pd - Power Dissipation330W
Reverse Transfer Capacitance (Crss@Vds)5.4pF
Number1 N-channel
Input Capacitance(Ciss)-
Gate Charge(Qg)-

Technical details

65V 4V 330W 1 N-channel SOT-957A RF FETs, MOSFETs RoHS

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