NXP · FETs & Power MOSFETs · MPN BLA6H0912-500112
No reviews yet — be the first to review NXP BLA6H0912-500112.
| Drain to Source Voltage | 100V |
|---|---|
| Configuration | - |
| Current - Continuous Drain(Id) | 54A |
| RDS(on) | 85mΩ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Operating Temperature | - |
| Pd - Power Dissipation | 450W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | - |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | - |
100V 54A 85mΩ 2.2V 450W SOT-634A RF FETs, MOSFETs RoHS