NXP BFU550XR215

NXP · Transistors (BJTs) · MPN BFU550XR215

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Specifications

Current - Collector Cutoff1nA
Transition frequency(fT)11GHz
Collector - Emitter Voltage VCEO16V
Emitter-Base Voltage VEBO3V
Pd - Power Dissipation450mW
typeNPN
Current - Collector(Ic)50mA
Operating Temperature-40℃~+150℃

Technical details

16V NPN 50mA SOT-143-4 Single Bipolar Transistors RoHS

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