NXP BF821/DG/B2215

NXP · Transistors (BJTs) · MPN BF821/DG/B2215

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)60MHz
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation250mW
Number1 PNP
typePNP
Current - Collector(Ic)50mA
Vce Saturation(VCE(sat))800mV
Operating Temperature-65℃~+150℃

Technical details

1 PNP PNP 50mA SOT-23-3 Single Bipolar Transistors RoHS

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