NXP BCV62B/DG/B2215

NXP · Transistors (BJTs) · MPN BCV62B/DG/B2215

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Specifications

Current - Collector Cutoff5uA
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation250mW
typePNP
Number2 PNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))650mV
Operating Temperature-65℃~+150℃

Technical details

30V PNP 2 PNP 100mA SOT-143B-3 Single Bipolar Transistors RoHS

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