NXP BCP56H115

NXP · Transistors (BJTs) · MPN BCP56H115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)155MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation1.6W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+175℃

Technical details

80V 1 NPN NPN 1A TO-261-4 Single Bipolar Transistors RoHS

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