NXP · Transistors (BJTs) · MPN BCP56H115
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 155MHz |
| Collector - Emitter Voltage VCEO | 80V |
| Emitter-Base Voltage VEBO | 7V |
| Pd - Power Dissipation | 1.6W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 1A |
| Vce Saturation(VCE(sat)) | 500mV |
| Operating Temperature | -55℃~+175℃ |
80V 1 NPN NPN 1A TO-261-4 Single Bipolar Transistors RoHS