NXP · Transistors (BJTs) · MPN BCM847DS/DG/B2 115
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| Current - Collector Cutoff | 5uA |
|---|---|
| Transition frequency(fT) | 250MHz |
| Collector - Emitter Voltage VCEO | 45V |
| Emitter-Base Voltage VEBO | 6V |
| Pd - Power Dissipation | 300mW |
| type | NPN |
| Number | 2 NPN |
| Current - Collector(Ic) | 100mA |
| Vce Saturation(VCE(sat)) | 400mV |
| Operating Temperature | -65℃~+150℃ |
45V NPN 2 NPN 100mA SOT-23-6 Single Bipolar Transistors RoHS