NXP BC857BQA147

NXP · Transistors (BJTs) · MPN BC857BQA147

No reviews yet — be the first to review NXP BC857BQA147.

Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation440mW
typePNP
Number1 PNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))200mV
Operating Temperature-55℃~+150℃

Technical details

45V PNP 1 PNP 100mA Single Bipolar Transistors RoHS

Related Transistors (BJTs)