NXP BC817DPN/DG/B2115

NXP · Transistors (BJTs) · MPN BC817DPN/DG/B2115

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Specifications

Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation600mW
Number1 NPN + 1 PNP
typeNPN+PNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))700mV

Technical details

45V 1 NPN + 1 PNP NPN+PNP 500mA TSOP-6 Single Bipolar Transistors RoHS

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