NXP BC68PAS115

NXP · Transistors (BJTs) · MPN BC68PAS115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)170MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation1.65W
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

20V 1 NPN NPN 2A Single Bipolar Transistors RoHS

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