NXP BC53-16PAS115

NXP · Transistors (BJTs) · MPN BC53-16PAS115

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation1.65W
typePNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

80V PNP 1A Single Bipolar Transistors RoHS

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