NXP · FETs & Power MOSFETs · MPN AFT26P100-4WSR3
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| Drain to Source Voltage | 65V |
|---|---|
| Current - Continuous Drain(Id) | - |
| Type | N-Channel |
| RDS(on) | - |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Operating Temperature | -40℃~+225℃ |
| Pd - Power Dissipation | 195W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | - |
| Output Capacitance(Coss) | - |
65V 1.6V 195W RF FETs, MOSFETs RoHS