NXP AFT05MS006NT1

NXP · FETs & Power MOSFETs · MPN AFT05MS006NT1

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Specifications

Drain to Source Voltage30V
Current - Continuous Drain(Id)-
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))2.2V
Operating Temperature-40℃~+150℃
Pd - Power Dissipation6W
Reverse Transfer Capacitance (Crss@Vds)1.7pF
Number-
Input Capacitance(Ciss)75pF
Gate Charge(Qg)-
Output Capacitance(Coss)47pF

Technical details

N-Channel 30V 6W PLD-1.5W

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