NXP · FETs & Power MOSFETs · MPN A3G26D055N-2400
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| Drain to Source Voltage | 125V |
|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Operating Temperature | -55℃~+150℃ |
| Pd - Power Dissipation | 8.3W |
125V 3.5V 8.3W PDFN-6(7x6.5) RF FETs, MOSFETs RoHS