NTE Electronics NTE2370

NTE Electronics · Transistors (BJTs) · MPN NTE2370

No reviews yet — be the first to review NTE Electronics NTE2370.

Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain80
Current - Collector(Ic)100mA
Input Resistor4.7kΩ
Resistor Ratio1
Number1 PNP Pre-Biased
Pd - Power Dissipation200mW

Technical details

50V 80 100mA 1 PNP Pre-Biased 200mW TO-92S Single, Pre-Biased Bipolar Transistors

Related Transistors (BJTs)