NTE Electronics · Transistors (BJTs) · MPN NTE2367
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 30 |
| Current - Collector(Ic) | 100mA |
| Resistor Ratio | 1 |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 300mW |
50V 30 100mA 1 NPN (Pre-Biased) 300mW TO-92S Single, Pre-Biased Bipolar Transistors RoHS