NIKO-SEM · FETs & Power MOSFETs · MPN PE642DT
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| Gate Charge(Qg) | 9.6nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 34A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 20W |
| Reverse Transfer Capacitance (Crss@Vds) | 139pF |
| RDS(on) | 9mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 782pF |
30V 34A 2.3V 20W 9mΩ@10V 2 N-Channel DFN-8-EP(3x3) Single FETs, MOSFETs RoHS