NIKO-SEM PD636BA

NIKO-SEM · FETs & Power MOSFETs · MPN PD636BA

No reviews yet — be the first to review NIKO-SEM PD636BA.

Specifications

Gate Charge(Qg)16.5nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)48A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation37.9W
Reverse Transfer Capacitance (Crss@Vds)91pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)765pF

Technical details

30V 48A 1.3V 37.9W 7mΩ@10V 1 N-channel TO-252-2 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs