NIKO-SEM · FETs & Power MOSFETs · MPN PD636BA
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| Gate Charge(Qg) | 16.5nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 48A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 37.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 91pF |
| RDS(on) | 7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 765pF |
30V 48A 1.3V 37.9W 7mΩ@10V 1 N-channel TO-252-2 Single FETs, MOSFETs RoHS