NIKO-SEM · FETs & Power MOSFETs · MPN PA410BD
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| Gate Charge(Qg) | 8.6nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 140mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 330pF |
100V 10A 2.3V 140mΩ@10V 1 N-channel TO-252-2 Single FETs, MOSFETs RoHS