NIKO-SEM · FETs & Power MOSFETs · MPN P6006BD
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| Gate Charge(Qg) | 11.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF |
| RDS(on) | 80mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
60V 21A 2.5V 80mΩ@5V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS