NIKO-SEM P6006BD

NIKO-SEM · FETs & Power MOSFETs · MPN P6006BD

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Specifications

Gate Charge(Qg)11.5nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)21A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)44pF
RDS(on)80mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

60V 21A 2.5V 80mΩ@5V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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