NIKO-SEM P6002OAG

NIKO-SEM · FETs & Power MOSFETs · MPN P6002OAG

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Specifications

Gate Charge(Qg)4nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)128pF
Current - Continuous Drain(Id)3.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation1.14W
Reverse Transfer Capacitance (Crss@Vds)87pF
RDS(on)180mΩ@2.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)415pF
TypeN-Channel + P-Channel

Technical details

20V 3.4A 1.3V 1.14W 180mΩ@2.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel TSOP-6-1.5mm Single FETs, MOSFETs RoHS

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