NIKO-SEM P2610BD

NIKO-SEM · FETs & Power MOSFETs · MPN P2610BD

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Specifications

Gate Charge(Qg)41.5nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)26.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.918nF

Technical details

N-Channel 100V 36A Surface Mount TO-252-2

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