NH NVT100N10C

NH · FETs & Power MOSFETs · MPN NVT100N10C

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Specifications

Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)40nC@50V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.921nF
TypeN-Channel

Technical details

N-Channel 100V 90A 83W Through Hole TO-220C

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