NH NSS085N100C

NH · FETs & Power MOSFETs · MPN NSS085N100C

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Specifications

Configuration-
Gate Charge(Qg)40nC
Drain to Source Voltage100V
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.9nF

Technical details

N-Channel 100V 70A Through Hole TO-220C

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