NH NPS9N20S

NH · FETs & Power MOSFETs · MPN NPS9N20S

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Specifications

Gate Charge(Qg)15.1nC@100V
Configuration-
Drain to Source Voltage200V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation75W
RDS(on)375.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)5pF
Number1 N-channel
Input Capacitance(Ciss)675pF
TypeN-Channel

Technical details

N-Channel 200V 9A 75W Surface Mount TO-252

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