NH NPS4N65S

NH · FETs & Power MOSFETs · MPN NPS4N65S

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Specifications

Gate Charge(Qg)15.5nC
Drain to Source Voltage650V
Output Capacitance(Coss)56pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)2.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)571pF
Vgs±30V

Technical details

N-Channel 650V 4A 75W Surface Mount TO-252

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