NH NPS20N65F

NH · FETs & Power MOSFETs · MPN NPS20N65F

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.06nF

Technical details

N-Channel 650V 20A 80W Through Hole TO-220F

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