NH NPS16N65F

NH · FETs & Power MOSFETs · MPN NPS16N65F

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Specifications

Drain to Source Voltage650V
Configuration-
Gate Charge(Qg)60nC@10V
Output Capacitance(Coss)225pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation14W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)830.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.75nF

Technical details

N-Channel 650V 10A 14W Through Hole TO-220F

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