NH NPS12N65F

NH · FETs & Power MOSFETs · MPN NPS12N65F

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)620mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.06nF

Technical details

N-Channel 650V 12A 55W Through Hole TO-220F

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