NH · FETs & Power MOSFETs · MPN NPB9N20ES
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| Gate Charge(Qg) | 15.1nC@100V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 75W |
| RDS(on) | 375.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 675pF |
| Type | N-Channel |
N-Channel 200V 9A 75W Through Hole TO-251