NH NPB7N65F

NH · FETs & Power MOSFETs · MPN NPB7N65F

No reviews yet — be the first to review NH NPB7N65F.

Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation48W
RDS(on)1.2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)6pF
Number1 N-channel
Input Capacitance(Ciss)1.15nF
Vgs±30V

Technical details

N-Channel 650V 7A Through Hole TO-220F

Related FETs & Power MOSFETs