NH NJS65R600F

NH · FETs & Power MOSFETs · MPN NJS65R600F

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Specifications

Gate Charge(Qg)12.6nC@325V
Drain to Source Voltage650V
Configuration-
Output Capacitance(Coss)23pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation12W
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)380pF

Technical details

N-Channel 650V 7A 12W Through Hole TO-220F

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