NH NJS65R280S

NH · FETs & Power MOSFETs · MPN NJS65R280S

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Specifications

Drain to Source Voltage650V
Configuration-
Gate Charge(Qg)46nC@10V
Current - Continuous Drain(Id)23A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.6V
Pd - Power Dissipation125W
RDS(on)280mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.5pF
Number1 N-channel
Input Capacitance(Ciss)1.6nF
TypeN-Channel

Technical details

N-Channel 650V 23A 125W Surface Mount TO-252

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