NH MMBT5551

NH · Transistors (BJTs) · MPN MMBT5551

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO150V
DC Current Gain250
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation225mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 150V 0.6A 225mW Surface Mount SOT-23

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