NH MMBT3906

NH · Transistors (BJTs) · MPN MMBT3906

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Specifications

Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation225mW
ConfigurationStandalone
Number1 PNP
typePNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 40V 0.2A 225mW Surface Mount SOT-23

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