Nexperia PXN8R3-30QLJ

Nexperia · FETs & Power MOSFETs · MPN PXN8R3-30QLJ

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)15.9nC@10V
Output Capacitance(Coss)270pF
Current - Continuous Drain(Id)11.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)11.1mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)760pF
TypeN-Channel

Technical details

30V 11.4A 2.2V 1.7W 11.1mΩ@4.5V 1 N-channel N-Channel MLPAK(3.3x3.3) Single FETs, MOSFETs RoHS

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