Nexperia PXN010-30QLJ

Nexperia · FETs & Power MOSFETs · MPN PXN010-30QLJ

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)6nC@4.5V
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)16.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation12.5W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)10.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)580pF
TypeN-Channel

Technical details

30V 16.5A 2.2V 12.5W 10.2mΩ@10V 1 N-channel N-Channel MLPAK(3.3x3.3) Single FETs, MOSFETs RoHS

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