Nexperia PUMZ2,115

Nexperia · Transistors (BJTs) · MPN PUMZ2,115

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Specifications

Current - Collector Cutoff100nA
DC Current Gain120
Pd - Power Dissipation180mW
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO7V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))250mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)150mA
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 50V 150mA 100MHz 180mW TSSOP-6-1.3mm

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