Nexperia PUMX1,115

Nexperia · Transistors (BJTs) · MPN PUMX1,115

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Specifications

Current - Collector Cutoff100nA
DC Current Gain120
Collector - Emitter Voltage VCEO40V
Pd - Power Dissipation300mW
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))200mV
typeNPN
Number2 NPN
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 40V 100mA 100MHz 300mW TSSOP-6(SOT-363)

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