Nexperia PUMH9,165

Nexperia · Transistors (BJTs) · MPN PUMH9,165

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Specifications

DC Current Gain100
Output Voltage(VO(on))-
Input Resistor10kΩ
Number2 NPN (Pre-Biased)
Resistor Ratio4.7
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))700mV
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)800mV
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

100 2 NPN (Pre-Biased) 300mW 100mA 50V TSSOP-6-1.3mm Bipolar Transistor Arrays, Pre-Biased RoHS

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