Nexperia PUMH18,115

Nexperia · Transistors (BJTs) · MPN PUMH18,115

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Specifications

DC Current Gain50
Output Voltage(VO(on))-
Input Resistor6.1kΩ
Number2 NPN (Pre-Biased)
Resistor Ratio2.6
Pd - Power Dissipation300mW
Input Voltage (VI(on)@Ic,Vce)1.5V
Current - Collector(Ic)100mA
Voltage - Input(Max)(VI(off))900mV
Collector - Emitter Voltage VCEO50V
Operating Temperature-65℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 300mW Surface Mount SOT-363

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