Nexperia · Transistors (BJTs) · MPN PUMH13F
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| Emitter-Base Voltage VEBO | 5V |
|---|---|
| DC Current Gain | 100 |
| type | NPN |
| Input Resistor | 6.1kΩ |
| Resistor Ratio | 12 |
| Number | 2 NPN (Pre-Biased) |
| Pd - Power Dissipation | 300mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@5mA,0.3V |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -65℃~+150℃ |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-363